Photoresist polymer and photoresist composition containing the same
AssigneeHynix Semiconductor Inc.
InventorMin Seok Son
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Abstract
Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer comprising a polymerization repeating unit represented by Formula I is less sensitive to change in the amount of energy due to its higher active energy than that of a conventional photoresist polymer. As a result, a phenomenon where the portion of the pattern for the storage electrode contact region that receives relatively large amount of light becomes too thin is avoided when the device isolation film pattern is formed, and wherein pattern collapse caused by a high aspect ratio due to high etching resistance is prevented or avoided. wherein R1–R10, a, b, c and d are as defined in the description.
Claims20
A photoresist polymer comprising a polymerization repeating unit represented by Formula 1:
- wherein R1 and R2 are individually H or CH3;
- R3 is linear or branched C3–C10 alkylene group;
- R4, R5 and R6 are individually C1–C3 alkoxy group;
- R7, R8 and R9 are individually H or CH3;
- R10 is linear or branched C1–C3 alkyl group;
- and
- a ratio of a:b:c:d falls within a range of 20˜40 mol %:
- 20˜35 mol %:
- 15˜25 mol %:
- 15˜20 mol %.
Dependencies are inferred from the claim text.