Dielectric composition and dielectric film element

A dielectric composition comprising, as a primary component, a composition represented by the following formula (2):

• PbxBipSrq(Mgy/3Nb2/3)aTib-zMzZrcO3 (2)
• (wherein x, p, q, and y satisfy the following relations:
• 0.65≦x≦1.01, 0.02≦p≦0.1, 0.02≦q≦0.20, and 0.8≦y≦1.0;
• a, b, and care decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200) in a triangular coordinate system of (a, b, c) having the following three vertexes (1, 0, 0), (0, 1, 0), and (0, 0, 1);
• z satisfies the following relation:
• 0.02≦z≦0.10;
• and M is at least one element selected from among Nb, Ta, Mo, and W, which dielectric composition contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO).

A dielectric film element comprising

• a dielectric layer formed of a dielectric composition, the dielectric composition comprising, as a primary component, a composition represented by the following formula (1):
• PbxBip(Mgy/3Nb2/3)aTib-zMzZrcO3 (1)
• (wherein x, p, and y satisfy the following relations:
• 0.85≦x≦1.03, 0.02≦p≦0.1, and 0.8≦y≦1.0;
• a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200) in a triangular coordinate system of (a, b, c) having the following three vertexes (1, 0, 0), (0, 1, 0), and (0, 0, 1);
• z satisfies the following relation:
• 0.02≦z≦0.10;
• and M is at least one element selected from among Nb, Ta, Mo, and W, which dielectric composition contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO);
• a first electrode provided on the obverse surface of the dielectric layer;
• a second electrode provided on the obverse surface or the reverse surface of the dielectric layer;
• and
• a substrate which is provided on the reverse surface of the dielectric layer and which supports the dielectric layer,
• wherein, when a drive voltage is applied to the first and second electrodes, electrons are emitted from the obverse surface of the dielectric layer.

A dielectric film element comprising

• a dielectric layer formed of a dielectric composition, the dielectric composition comprising, as a primary component, a composition represented by the following formula (2):
• PbxBipSrq(Mgy/3Nb2/3)aTib-zMzZrcO3 (2)
• (wherein x, p, q, and y satisfy the following relations:
• 0.65≦x≦1.01, 0.02≦p≦0.1, 0.02≦q≦0.20, and 0.8≦y≦1.0;
• a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200) in a triangular coordinate system of (a, b, c) having the following three vertexes (1, 0, 0), (0, 1, 0), and (0, 0, 1);
• z satisfies the following relation:
• 0.02≦z≦0.10;
• and M is at least one element selected from among Nb, Ta, Mo, and W, which dielectric composition contains Ni in an amount of 0.05 to 2.0 wt. % as reduced to NiO);
• a first electrode provided on the obverse surface of the dielectric layer;
• a second electrode provided on the obverse surface or the reverse surface of the dielectric layer;
• and
• a substrate which is provided on the reverse surface of the dielectric layer and which supports the dielectric layer,
• wherein, when a drive voltage is applied to the first and second electrodes, electrons are emitted from the obverse surface of the dielectric layer.