Light-emitting diode with openings formed in a stacked structure
AssigneesEpitech Technology Corporation, Shi-Ming Chen
InventorShi-Ming Chen
Life of this patent
Estimating the term…
Abstract
A light-emitting diode has a sub-mount, a first conductivity type substrate deposed on the sub-mount, a reflector layer deposed between the sub-mount and the first conductivity type substrate, a first conductivity type buffer layer deposed on the first conductivity type substrate, a first conductivity type distributed Bragg reflector (DBR) layer deposed on the first conductivity type buffer layer, an illuminant epitaxial structure deposed on the first conductivity type distributed Bragg reflector layer, and a second conductivity type window layer deposed on the illuminant epitaxial structure.
Claims27
A light-emitting diode, comprising:
- a sub-mount;
- a first conductivity type substrate deposed on the sub-mount;
- a reflector layer deposed between the sub-mount and the first conductivity type substrate;
- a first conductivity type buffer layer deposed on the first conductivity type substrate, wherein a plurality of openings are formed in a stacked structure, and the stacked structure comprises the first conductivity type substrate and the first conductivity type buffer layer, and the reflector layer conformally covers on the stacked structure;
- a first conductivity type distributed Bragg reflector layer deposed on the first conductivity type buffer layer;
- a first conductivity type cladding layer deposed on the first conductivity type distributed Bragg reflector layer;
- an active layer deposed on the first conductivity type cladding layer;
- a second conductivity type cladding layer deposed on the active layer;
- and
- a second conductivity type window layer deposed on the second conductivity type cladding layer.
A light-emitting diode, comprising:
- a sub-mount;
- a first conductivity type substrate deposed on the sub-mount;
- a first conductivity type buffer layer deposed on the first conductivity type substrate;
- a first conductivity type distributed Bragg reflector layer deposed on the first conductivity type buffer layer, wherein a stacked structure composed of the first conductivity type substrate, the first conductivity type buffer layer and the first conductivity type distributed Bragg reflector layer comprises a plurality of openings formed therein, and the openings extend upwardly from the first conductivity type substrate to at least expose a portion of the first conductivity type distributed Bragg reflector layer;
- a transparent film conformally covering on a bottom of the stacked structure and connecting the sub-mount and the first conductivity type substrate;
- a first conductivity type cladding layer deposed on the first conductivity type distributed Bragg reflector layer;
- an active layer deposed on the first conductivity type cladding layer;
- a second conductivity type cladding layer deposed on the active layer;
- and
- a second conductivity type window layer deposed on the second conductivity type cladding layer.
Dependencies are inferred from the claim text.