Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toru Takayama, Yohei Kanno
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Abstract
A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
Claims36
A method of manufacturing a thin film integrated circuit device comprising:
- forming a peel-off layer over a semiconductor substrate having an oxide surface;
- forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;
- forming a groove in a boundary region between the plurality of thin film integrated circuit devices;
- and
- separating the plurality of thin film integrated circuit devices by introducing one of a gas or a liquid including halogen fluoride into the groove to remove the peel-off layer.
A method of manufacturing a thin film integrated circuit device comprising:
- forming a peel-off layer over a semiconductor substrate with an oxide surface;
- forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;
- forming a groove in a boundary region between the plurality of thin film integrated circuit devices;
- temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices;
- separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer;
- and
- removing the jig bonded to the plurality of thin film integrated circuit devices.
A method of manufacturing a non-contact type thin film integrated circuit device comprising:
- forming a peel-off layer over a semiconductor substrate with an oxide surface;
- forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;
- forming a groove in a boundary region between the plurality of thin film integrated circuit devices;
- separating the plurality of thin film integrated circuit devices by introducing one of a gas or a liquid including halogen fluoride into the groove to remove the peel-off layer;
- and
- forming an antenna around the separated thin film integrated circuit device.
A method of manufacturing a thin film integrated circuit device comprising:
- performing a thermal treatment in order to obtain a semiconductor substrate having an oxide surface;
- forming a peel-off layer over the semiconductor substrate having the oxide surface;
- forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;
- forming a groove in a boundary region between the plurality of thin film integrated circuit devices;
- and
- separating the plurality of thin film integrated circuit devices by introducing one of a gas or a liquid including halogen fluoride into the groove to remove the peel-off layer.
A method of manufacturing a thin film integrated circuit device comprising:
- performing a thermal treatment in order to obtain a semiconductor substrate with an oxide surface;
- forming a peel-off layer over the semiconductor substrate with the oxide surface;
- forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween;
- forming a groove in a boundary region between the plurality of thin film integrated circuit devices;
- temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices;
- separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer;
- and
- removing the jig bonded to the plurality of thin film integrated circuit devices.
Dependencies are inferred from the claim text.