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US 7,270,596 B2Granted
Chemical mechanical polishing process
AssigneeMicron Technology, Inc.
InventorTrung Tri Doan
Life of this patent
Estimating the term…
Abstract
A chemical mechanical polishing process includes rotating at least one of a semiconductor substrate and polishing pad relative to the other. A chemical mechanical polishing slurry is provided intermediate the substrate and pad. The substrate is polished with the slurry and pad during the rotating. The chemical mechanical polishing slurry includes liquid and abrasive solid components. At least some of the abrasive solid component includes individually non-homogeneous abrasive particles.
Claims19
A chemical mechanical polishing process comprising:
- rotating at least one of a substrate and polishing pad relative to the other;
- and
- providing a chemical mechanical polishing slurry intermediate the substrate and pad, and polishing the substrate with the slurry and pad during the rotating, the chemical mechanical polishing slurry comprising liquid and abrasive solid components, at least some of the abrasive solid components comprising individually non-homogeneous abrasive particles, the non-homogeneous abrasive particles being characterized by more than two distinct material layers, an outermost of the more than two distinct material layers comprising an elemental metal.
A chemical mechanical polishing process comprising:
- rotating at least one of a substrate and polishing pad relative to the other;
- and
- providing a chemical mechanical polishing slurry intermediate the substrate and pad, and polishing the substrate with the slurry and pad during the rotating, the chemical mechanical polishing slurry comprising liquid and abrasive solid components, at least some of the abrasive solid components comprising individually non-homogeneous abrasive particles, the non-homogeneous abrasive particles being characterized by more than two distinct material layers, and prior to providing the chemical mechanical polishing slurry intermediate the substrate and the pad, forming the chemical mechanical polishing slurry by adding the particles in dry form to liquid.
Dependencies are inferred from the claim text.