Configurable width buffered module having flyby elements

A memory module comprising:

• a connector interface which includes a first contact, a second contact and a third contact;
• a first integrated circuit having memory including a first storage cell;
• a second integrated circuit having memory including a second storage cell;
• a buffer device coupled to the first integrated circuit and the connector interface;
• and
• a first internal signal line coupled to the second contact, the third contact and the buffer device, wherein the buffer device is operable in a first mode and a second mode, wherein:
• during the first mode of operation, at a first time the first storage cell is accessible from the first contact through the buffer device and the second storage cell is accessible from the second contact through the buffer device;
• and
• during the second mode of operation, at a second time the first storage cell is accessible from the first contact through the buffer device and a first signal is transferred on the first internal signal line.

A memory module comprising:

• a connector interface which includes a first contact, a second contact and a third contact;
• a first integrated circuit having memory including a first storage cell, a second storage cell and a third storage cell;
• a buffer device coupled to the first integrated circuit and the connector interface;
• and
• a first internal signal line coupled to the second contact, the third contact and the buffer device, wherein the buffer device is operable in a first mode and a second mode, wherein:
• during the first mode of operation at a first time, the first storage cell is accessible from the first contact through the buffer device and the second storage cell is accessible from the second contact through the buffer device;
• and
• during the second mode of operation at a second time, the third storage cell is accessible from the first contact through the buffer device and a first signal is transferred on the first internal signal line.

A memory module comprising:

• a connector interface which includes a first contact, a second contact and a third contact;
• a first integrated circuit having memory including a first storage cell and second storage cell;
• a second integrated circuit having memory including a third storage cell and fourth storage cell;
• a buffer device coupled to the first integrated circuit, the second integrated circuit and the connector interface;
• and
• a first internal signal line coupled to the second contact, the third contact and the buffer device, wherein the buffer device is operable in a first mode and a second mode, wherein:
• during the first mode of operation at a first time, the first storage cell is accessible from the first contact through the buffer device and the third storage cell is accessible from the second contact through the buffer device;
• and
• during the second mode of operation at a second time, the second storage cell is accessible from the first contact through the buffer device and a first signal is transferred on the first internal signal line.

A memory module, comprising:

• a buffer device;
• a plurality of integrated circuits, coupled the buffer device, having a plurality of respective storage cells;
• and
• means for accessing the respective plurality of storage cells and transferring information through the memory module, wherein the means includes the buffer device operating in a first mode and a second mode, wherein:
• during the first mode, at a first time, a first storage cell in a first integrated circuit of the plurality of integrated circuits is accessible from a first contact of the memory module through the buffer device and a second storage cell in the first integrated circuit is accessible from a second contact of the memory module through the buffer device;
• and
• during the second mode, at a second time, the first storage cell is accessible from the first contact through the buffer device and a first signal is transferred on a first internal signal line coupled to the second contact and a third contact of the memory module.