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US 7,265,392 B2Granted
Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
AssigneeOSRAM GmbH
InventorsBerthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
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Abstract
A light-emitting diode chip (1) comprises a GaN-based, radiation-emitting epitaxial layer sequence (3), an active region (19), an n-doped layer (4) and a p-doped layer (5). The p-doped layer (5) is provided, on its main surface (9) facing away from the active region (19), with a reflective contact metallization (6) comprising a radioparent contact layer (15) and a reflective layer (16). Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
Claims17
A light-emitting diode chip comprising
- a GaN-based, radiation-emitting epitaxial layer sequence comprising an active region, an n-doped layer and a p-doped layer, and
- a reflective contact metallization assigned to said p-doped layer and comprising:
- a radiation permeable contact layer and a reflective layer, and
- in which said radiation permeable contact layer is arranged between said p-doped layer and said reflective layer,
- wherein said contact layer is a non-closed layer particularly having an island-like or a net-like structure or a combination thereof, and
- wherein said reflective layer covers more than 50% of the main surface of said p-doped layer facing away from said active region.
3 more elements
Dependencies are inferred from the claim text.