Method of driving electron-emitting device, electron source, and image-forming apparatus

A method of driving an electron source comprising:

• a plurality of units, each of which includes a substrate, a first conductor, and a second conductor;
• a plurality of X-directional wirings;
• and a plurality of Y-directional wirings, the first conductor and the second conductor being located on the substrate, the substrate including:
• a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0;
• and a film which is stacked on the member and contains silicon oxide as a main component, the X-directional wirings being connected with one of the first conductor and the second conductor in each of the units, the Y-directional wirings being connected with the other of the first conductor and the second conductor in each of the units, the method comprising:
• selecting an X-directional wiring from the plurality of X-directional wirings;
• selecting a Y-directional wiring connected with at least one selected from the plurality of units connected with the selected X-directional wiring;
• and
• applying pulse voltages at least two times between the selected X-directional wiring and the selected Y-directional wiring,
• wherein an interval between the pulse voltages is equal to or longer than 10 msec.

A method of driving an image display apparatus comprising an electron source and a light-emitting member substrate that causes light emission by an electron beam emitted from the electron source, the electron source comprising:

• a plurality of units, each of which includes a substrate, a first conductor, and a second conductor;
• a plurality of X-directional wirings;
• and a plurality of Y-directional wirings, the first conductor and the second conductor being located on the substrate, the substrate including:
• a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0;
• and a film which is stacked on the member and contains silicon oxide as a main component, the X-directional wirings being connected with one of the first conductor and the second conductor in each of the units, the Y-directional wirings being connected with the other of the first conductor and the second conductor in each of the units, the method comprising:
• selecting an X-directional wiring from the plurality of X-directional wirings;
• selecting a Y-directional wiring connected with at least one selected from the plurality of units connected with the selected X-directional wiring;
• and
• applying pulse voltages at least two times between the selected X-directional wiring and the selected Y-directional wiring,
• wherein an interval between the pulse voltages is set to a value equal to or longer than 10 msec.

A method of driving an electron-emitting device comprising a substrate, first and second conductors located on the substrate, and an electroconductive film which includes an electron-emitting region and is electrically connected between the first and second conductors, the substrate including:

• a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0;
• and a film which is stacked on the member and contains silicon oxide as a main component, the method comprising:
• a first step of applying a pulse voltage between the first and second conductors so that an electric current flows between the first and second conductors;
• and
• a second step of applying a pulse voltage between the first and second conductors after the first step so that an electric current flows between the first and second conductors,
• wherein a time interval between the first step and the second step is adjusted to a value equal to or longer than 10 msec.

A method of manufacturing an electron-emitting device comprising:

• a first step of disposing a first conductor and a second conductor on a substrate comprising a member which contains SiO2 as a main ingredient, and contains Na2O and K2O and so that a molar ratio of K2O to Na2O is 0.5 to 2.0, and a film which is stacked on the member and contains SiO2 as a main ingredient;
• and
• a second step of applying repeatedly pulse voltages between the first and second conductors with a quiescent time between the applying of pulse voltages, wherein
• the pulse voltage is set based on a current value measured by applying pulse voltages for current measurement between the first and second conductors with a quiescent time equal to or longer than 10 msec.

A method of manufacturing an electron source comprising a plurality of electron-emitting devices comprising:

• a first step of disposing a plurality of units each comprising a first conductor and a second conductor, a plurality of X-directional wirings each being connected to one of the first and second conductors of the unit, and Y-directional wirings each being connected to the other of the first and second conductors of the unit, on a substrate comprising a member which contains SiO2 as a main ingredient, and contains Na2O and K2O and so that a molar ratio of K2O to Na2O is 0.5 to 2.0, and a film which is stacked on the member and contains SiO2 as a main ingredient;
• and
• a second step of selecting a desired one or more from the plurality of X-directional wirings, and selecting one or more Y-directional wirings connected to one or more selected units among the units connected to the selected X-directional wirings, and applying repeatedly pulse voltages between the first and second conductors with a quiescent time between the applying of pulse voltages, wherein
• the pulse voltage to be applied to the unit is set based on a current value measured by applying pulse voltages for current measurement to the unit with a quiescent time equal to or longer than 10 msec.