US 7,259,545 B2 · Integrated sensor

Abstract

An integrated sensor includes a magnetoresistance element electrically coupled to a device disposed on or integrated in a silicon substrate. A conductor is provided proximate to the magnetoresistance element. The integrated sensor can be used to provide various devices, such as a current sensor, a magnetic field sensor, or an isolator. Further, the integrated sensor can be used in an open loop configuration or in a closed loop configuration in which an additional conductor is provided. The magntoresistance element may be formed over the silicon substrate or on a separate, non-silicon substrate. Also described is an integrated sensor comprising a substrate, a magnetic field transducer disposed over a surface of the substrate, and a conductor disposed over the surface of the substrate proximate to the magnetic field transducer. The magnetic field transducer can be a Hall effect transducer or a magnetoresistance element.

Claims31

Dependent claims

An electronic circuit, comprising:

a silicon substrate;
a device supported by the silicon substrate selected from among a passive electronic component and an active electronic component;
a conductor disposed over said silicon substrate;
an insulating layer disposed between said silicon substrate and said conductor;
and
a magnetoresistance element disposed over said conductor and electrically coupled to said device, wherein said magnetoresistance element is responsive to a magnetic field generated by a current through said conductor.

3 more elements

Dependencies are inferred from the claim text.

Integrated sensor

Life of this patent

Integrated sensor

Life of this patent

Abstract

Claims31