Multicomponent barrier layers in quantum well active regions to enhance confinement and speed

A vertical cavity surface emitting laser (VCSEL), comprising:

• an active region having a first edge and a second edge, said active region further comprising at least one quantum well containing nitrogen and at least one multi-component barrier, said at least one multi-component barrier layer disposed next to said at least one quantum well, said multi-component barrier layer further comprising a layer of GaAs disposed next to a layer of GaAsN, wherein a portion of said at least one multi-component barrier layer comprises a reduced barrier energy to carrier flow near said at least one quantum well, thereby enhancing the speed and efficiency of the device;
• and
• first and second confinement regions further comprising at least one confinement layer, wherein said first confinement region is disposed next to and outside of said first edge of said active region and said second confinement region is disposed next to and outside of said second edge of said active region.