Test mode for IPP current measurement for wordline defect detection

A method for testing for defects of an integrated circuit memory device, comprising:

• a. selecting a wordline of the memory device to be tested;
• b. applying an externally supplied voltage to the selectd wordline of the memory device;
• c. measuring a current on the selected wordline as a result of application of said externally supplied voltage;
• d. comparing the measured current with a reference value that is derived from a measured current on one or more deactivated wordlines to determine whether the wordline has a defect;
• and
• e. repeating (a) through (d) for each of a plurality of wordlines of the memory device.

An intergrated circuit memory device, comprising:

• a. a contact pad for connection to an externally supplied wordline voltage;
• b. an address decoder that selects one of a plurality of wordlines for connection to said contact pad;
• and
• c. a command decoder that is responsive to a command to disable on-chip wordline voltage generator thereby deactivating the plurality of wordlines to enable measurement of current on a selected wordline as a result of application of said externally supplied wordline voltage.

An intergrated circuit memory device, comprising:

• a. means for receiving an externally supplied wordline voltage;
• b. means for selecting one of a plurality of wordlines for connection to said externally supplied voltage;
• and
• c. means for decoding responsive to a command to disable an on-chip wordline voltage generator thereby deactivating all wordlines in said memory device to enable measurement of current on a selected wordline as a result of application of said externally supplied wordline voltage.