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US 7,257,037 B2Granted
Redundancy circuit in semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorSang-Hee Kang
Life of this patent
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Abstract
A redundancy circuit in a semiconductor memory device comprises a fuse set controller configured to output a redundancy enable signal enabled according to applied address signals; a redundant selector; a spare redundant selector; and a spare fuse controller configured to be controlled by the redundancy enable signal, and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector in accordance with an internal fuse option.
Claims7
A redundancy circuit in a semiconductor memory device comprising:
- a fuse set controller configured to output a redundancy enable signal based on an input of applied address signals;
- a redundant selector;
- a spare redundant selector;
- and
- a spare fuse controller configured to be controlled by the redundancy enable signal and to output a selection control signal that selects at least one of the redundant selector and the spare redundant selector.
2 more elements
Dependencies are inferred from the claim text.