Semiconductor integrated circuit device
AssigneesHitachi, Ltd., Elpida Memory, Inc.
InventorsRiichiro Takemura, Takeshi Sakata, Norikatsu Takaura, Kazuhiko Kajigaya
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AssigneesHitachi, Ltd., Elpida Memory, Inc.
InventorsRiichiro Takemura, Takeshi Sakata, Norikatsu Takaura, Kazuhiko Kajigaya
Estimating the term…
There is achieved a high-integrated and high-speed nonvolatile memory which can stabilize an operation of a phase-change memory for a short operation cycle time. A latch is provided in a write driver. A change to a high-resistance state of a phase-change element is performed per column cycle by a write-enable signal, and a change to a low-resistance state thereof is performed after a pre-charge command is inputted and concurrently with deactivation of a pre-charge signal. Thereby, a write time to a memory cell in which phase-change resistance is changed to a low-resistance state, and a period from a write operation for changing the phase-change resistance to a high-resistance state to a read operation to the above memory cell can be lengthened without extending the column cycle time, so that the stable write operation is achieved.
A semiconductor integrated circuit device comprising:
Dependencies are inferred from the claim text.