Inverter non-volatile memory cell and array system

A non-volatile memory (NVM) system, comprising:

• an array, of NVM cells configured in rows and columns, each NVM cell comprising a storage element and a programming element, such that each NVM cell is arranged to be programmed, erased, and read based on a plurality of row selection, column selection, and programming signals, wherein a supply voltage for the storage elements is turned off during a programming mode and an erase mode;
• and an inverter circuit for each row of cells that is configured to provide an inverted row selection signal to each row, wherein the storage element of each NVM cell comprises a field effect transistor (FET) pair that are arranged to share a common floating gate,
• wherein the FET pair includes a first type FET and a second type FET such that:
• a source of the first type FET is arranged to receive a high supply voltage;
• a source of the second type FET is arranged to receive a low supply voltage;
• and a drain of the first type FET and a drain of the second type FET are coupled together and arranged to provide an output voltage
• wherein the programming element comprises two p-FETs coupled together at their gate terminals such that electrons are injected to the common floating gate when a high programming voltage is provided to a source, a drain, and an n-well terminal of a first p-FET of the two p-FETs and a low programming voltage is provided to a source, a drain, and an n-well terminal of a first p-FET of the two p-FETs, and wherein the gate terminals of the first and second p-FETs are coupled to the common floating gate of the storage element.