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US 7,257,025 B2Granted
Method for reading non-volatile memory cells
AssigneeSaifun Semiconductors Ltd.
InventorsEduardo Maayan, Guy Cohen, Boaz Eitan
Life of this patent
Estimating the term…
Abstract
A method includes changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes determining a history read reference level for correct reading of at least one history cell, selecting a memory read reference level according to the first read reference level, and reading non-volatile memory array cells associated with the at least one history cell using the memory read reference level.
Claims26
A method comprising:
- determining a history read reference level for correct reading of at least one history cell;
- selecting a memory read reference level according to said history read reference level;
- and reading non-volatile memory array cells associated with said at least one history cell using said memory read reference level.
A method comprising:
- changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells, determining a history read reference level for correct reading of at least one history cell according to said changing;
- selecting a memory read reference level according to said history read reference level;
- and reading non-volatile memory array cells associated with said at least one history cell using said memory read reference level.
Dependencies are inferred from the claim text.