Thin film magnetic memory device having redundant configuration

A thin film magnetic memory device permitting parallel input/output of data of m bits (m is an integer not less than 2), comprising:

• a plurality of blocks each including a plurality of memory cells arranged in rows and columns and a plurality of dummy memory cells arranged to form dummy memory cell rows by sharing said columns with said plurality of memory cells,
• each said memory cell having an electric resistance in accordance with magnetically written data and each said dummy memory cell having a prescribed electric resistance,
• each said block further including
• (m+1) memory cell columns formed of said plurality of memory cells and said plurality of dummy memory cells, and
• (m+1) data line pairs each formed of complementary first and second data lines, provided corresponding to said (m+1) memory cell columns,
• each said first and second data lines being connected to one and the other of the memory cell and the dummy memory cell belonging to corresponding one of said (m+1) memory cell columns at the time of data read from corresponding one of said plurality of blocks,
• the thin film magnetic memory device further comprising:
• m data terminals for sending/receiving said data to/from an outside;
• and
• a shift redundancy circuit, when there is a defect in at least one of said memory cells and said dummy memory cells in a selected block, for reading and writing said data sent/received by said m data terminals using m said data line pairs other than the data line pair connected to said defect in said selected block.