Systems and methods for a magnetic memory device that includes a single word line transistor
AssigneeMacronix International Co., Ltd.
InventorChiaHua Ho
Life of this patent
Estimating the term…
Abstract
An MRAM cell comprises a magnetic metal layer and a magnetic sensing device in close proximity to the magnetic metal layer. One end of the magnetic metal layer is coupled with a word line transistor and a diode is included and configured to couple the magnetic sensing device to a bit line. The magnetic metal layer can be used to both program and read the cell, eliminating the need for a second current line in the cell.
Claims31
A non-volatile memory cell, comprising:
- a word line transistor comprising a gate, a source, and a drain;
- a magnetic metal layer, wherein one end of the magnetic metal layer is coupled with word line transistor;
- a magnetic sensing device separated from the magnetic metal layer by a proximity conductor;
- a first bit line;
- a diode configured to couple the magnetic sensing device to the first bit line;
- and
- a second bit line coupled with the other end of the magnetic metal layer.
In a non-volatile memory cell comprising a magnetic metal layer separated from a magnetic sensing device by a proximity conductor, a method for reading the state of the magnetic sensing device, comprising:
- applying a voltage difference between a first bit line coupled with the magnetic sensing device via a diode and a second bit line coupled with one end of the magnetic metal layer;
- and
- applying a turn off voltage to the gate of a transistor coupled with the other end of the magnetic metal layer.
In a non-volatile memory cell comprising a magnetic metal layer separated from a magnetic sensing device by a proximity conductor, a method for programming the magnetic sensing device, comprising:
- applying a turn on voltage to the gate of a transistor coupled with one end of the magnetic metal layer;
- and
- applying a voltage difference between a bit line coupled with a source of the transistor and a second bit line coupled with the other end of the magnetic metal layer.
Dependencies are inferred from the claim text.