PMC memory circuit and method for storing a datum in a PMC memory circuit
AssigneeInfineon Technologies AG
InventorRalf Symanczyk
Life of this patent
Estimating the term…
Abstract
The invention relates to a PMC memory circuit comprising a PMC memory cell having a PMC component, the PMC component having a solid electrolyte with permanently introduced defects, so that the PMC component has a hysteresis with regard to its I-V characteristic curve with an upper and a lower current value branch, and a data retention unit, which, for storing a state to be stored, applies to the PMC component a center voltage or storage voltage at which the PMC component is operated, either in the upper current value branch of the hysteresis for the purpose of storing a first state or in the lower current value branch of said hysteresis for the purpose of storing a second state.
Claims14
A programmable metallization cell (PMC) memory circuit, comprising:
- a PMC memory cell having a PMC component comprising a solid electrolyte with permanently introduced defects, the cell having a current-voltage (I-V) characteristic curve having a hysterisis with an upper current value branch and a lower current value branch, wherein the PMC component is operated in the lower current value branch of the hysteresis for storing a first state, and wherein the PMC component is operated in the higher current value branch of the hysteresis for storing a second state;
- and
- a data retention unit for retaining a respective state stored in the PMC memory cell, wherein the data retention unit is configured to selectively apply to the PMC component a storage voltage at which the PMC component is operated.
A method for storing a datum, comprising
- providing PCM memory circuit having a PMC memory cell having a PMC component, the PMC component having a solid electrolyte with permanently introduced defects and having a hysteresis with an upper current value branch and a lower current value branch with regard to its I-V characteristic curve;
- and
- applying a center voltage for storing a state to be stored in the PMC memory cell, wherein the PMC component is operated in the lower current value branch of the hysteresis for storing a first state, and wherein the PMC component is operated in the higher current value branch of the hysteresis for storing a second state.
A programmable metallization cell (PMC) memory circuit, comprising:
- a PMC memory cell comprising:
- a PMC element comprising a solid electrolyte with permanently introduced defects which exhibits a hysteresis with regard to its I-V characteristic curve with an upper current value branch and a lower current value branch, wherein a first state is defined by the PMC element operating in the lower current value branch of the hysteresis, and wherein a second state is defined by the PMC element operating in the higher current value branch of the hysteresis;
- and
- a data retention unit configured to apply to the PMC element a storage voltage at which the PMC element is operated.
Dependencies are inferred from the claim text.