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US 7,256,972 B2Granted
CPP sensor with improved pinning strength longitudinal bias structure
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Singh Gill
Life of this patent
Estimating the term…
Abstract
A current perpendicular to plane (CPP) sensor having an in stack bias layer having a desired negative magnetostriction for efficient biasing of the free layer. The sensor includes a free layer, a pinned layer and a first spacer layer sandwiched between the free layer and the pinned layer. The sensor further includes an in stack bias structure disposed adjacent to the free layer, opposite the first spacer layer. The in stack bias structure includes a layer of CoFe exchange coupled with a layer of antiferomagnetic (AFM) material. A layer of CoX is then exchange coupled to the layer of CoFe. The element X can be selected from the material including B, Si, SiB, Ni, Nb, and Y.
Claims30
A current perpendicular to plane (CPP) sensor, comprising:
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer of CoFe, the element X comprising a material selected from the group consisting of B, Si, SiB Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX.
7 more elements
A current perpendicular to plane (CPP) sensor, comprising:
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer of CoFe, the element X comprising a material selected from the group consisting B, Si, SiB, Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX;
- wherein:
- the layer comprising CoX has a first magnetostriction and a first thickness;
- the layer of CoFe has a second magnetostriction and a second thickness;
- and
- the product of the first magnetostriction and the first thickness is greater than the product of the second magnetostriction and the second thickness.
12 more elements
A current perpendicular to plane (CPP) sensor, comprising:
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer of CoFe, the element X comprising a material selected from the group consisting of B, Si, SiB, Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX;
- wherein the second spacer layer comprises Ta.
8 more elements
A current perpendicular to plane (CPP) sensor, comprising:
- a seed layer comprising NiFeCr formed at the bottom of the sensor;
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer of CoFe, the element X comprising a material selected from the group consisting of B, Si, SiB, Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX.
8 more elements
A current perpendicular to plane (CPP) sensor, comprising:
- a seed layer comprising NiFe formed at the bottom of the sensor;
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer of CoFe, the element X comprising a material selected from the group consisting of B, Si, SiB, Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX.
8 more elements
A current perpendicular to plane (CPP) sensor, comprising:
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer comprising CoFe, the element X comprising a material selected from the group consisting of B, Si, SiB, Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX.
7 more elements
A current perpendicular to plane (CPP) sensor, comprising:
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoB and having about 20 atomic percent B, exchange coupled to the layer of CoFe;
- and
- a second spacer layer separating the free layer from the layer comprising CoX.
7 more elements
A magnetic data recording system, comprising:
- a magnetic disk;
- a motor connected with the magnetic disk for rotating the magnetic disk;
- slider;
- an actuator connected with the slider for moving the slider adjacent to the magnetic disk;
- a magnetic head connected with the slider, the magnetic head including a current perpendicular to plane (CPP) magnetoresistive sensor, the sensor further comprising:
- a magnetic pinned layer;
- a magnetic free layer;
- a non-magnetic first spacer layer separating the free layer and the pinned layer;
- and
- an in stack bias structure disposed adjacent to the free layer opposite the first spacer layer, the in stack bias structure further comprising:
- an antiferromagnetic layer (AFM layer);
- a layer of CoFe exchange coupled with the AFM layer;
- a layer comprising CoX, exchange coupled to the layer of CoFe, the element X comprising a material selected from the group consisting of B, Si, SiB, Ni, Nb, and Y;
- and
- a second spacer layer separating the free layer from the layer comprising CoX.
12 more elements
Dependencies are inferred from the claim text.