Solid-state imaging device and manufacturing method for solid-state imaging device

A solid-state imaging device, comprising:

• a semi-conductor substrate demarcating a two-dimensional surface;
• a multiplicity of photoelectric conversion units formed at grid points of a first grid of a first tetragonal matrix and a second tetragonal matrix having grid points between grid points of the first tetragonal matrix;
• a vertical transfer channel arranged in a vertical direction by weaving a space between the horizontally adjacent photoelectric conversion units;
• a plurality of single-layered electrodes formed above the vertical transfer channel and arranged in a horizontal direction by weaving a space between the vertically adjacent photoelectric conversion units, wherein each single-layered electrode does not overlap with adjacent single-layered electrodes and has a gap with each of the adjacent single-layered electrodes;
• a charge storing unit formed, in correspondence to the vertical transfer channel, at one end of the vertical transfer channel on the semiconductor substrate;
• and
• a signal processor having a gate electrode and formed, in correspondence to the vertical transfer channel, at one end of the charge storing unit, wherein the gate electrode is made of a same electrode material as the single-layered electrode and is formed on a same layer as the single-layered electrode.

A manufacturing method for a solid-state imaging device, the method comprising the steps of:

• (a) preparing a semi-conductor substrate demarcating a two-dimensional surface;
• (b) forming, in an image area of the semiconductor substrate, a multiplicity of photoelectric conversion units at grid points of a first grid of a first tetragonal matrix and a second tetragonal matrix having grid points between grid points of the first tetragonal matrix;
• (c) forming a vertical transfer channel arranged in a vertical direction by weaving a space between the horizontally adjacent photoelectric conversion units;
• and
• (d) forming a plurality of single-layered electrodes crossing above the vertical transfer channel and extending in a horizontal direction by weaving a space between the vertically adjacent photoelectric conversion units and by arranging each single-layered electrode to have a gap with each of adjacent single-layered electrodes without overlapping with the adjacent single-layered electrodes, and simultaneously forming a gate electrode of a signal processor at one end of the vertical transfer channel in correspondence to the vertical transfer channel, wherein the single-layered electrodes and the gate electrode are made of a same electrode material and the gate electrode is formed on a same layer as the single-layered electrodes.