Antenna system using complementary metal oxide semiconductor techniques
AssigneeIntel Corporation
InventorsKeith R. Tinsley, Seong-Youp Suh
Life of this patent
Estimating the term…
Abstract
Apparatus, system, and method are described for a complementary metal oxide semiconductor (CMOS) integrated circuit device having a first metal layer that includes a radiating element and a second metal layer that includes a first conductor coupled to the radiating element. The first conductor and the radiating element are mutually coupled to form an antenna to wirelessly communicate a signal.
Claims26
An apparatus, comprising:
- a complementary metal oxide semiconductor (CMOS) integrated circuit device having
- a first metal layer comprising a radiating element;
- and
- a second metal layer comprising a first conductor coupled to said radiating element;
- wherein said first conductor and said radiating element are mutually coupled to form an antenna to wirelessly communicate a signal;
- and
- wherein said radiating element is formed of raised metal on a top metal layer of said CMOS integrated circuit device.
A system, comprising:
- a transceiver;
- and
- a complementary metal oxide semiconductor (CMOS) integrated circuit device having
- a first metal layer comprising a radiating element;
- and
- a second metal layer comprising a first conductor coupled to said radiating element;
- wherein said first conductor and said radiating element are mutually coupled to form an antenna to wirelessly communicate a signal;
- and
- wherein said radiating element is formed of raised metal on a top metal layer of said CMOS integrated circuit device.
A method, comprising:
- on a complementary metal oxide semiconductor (CMOS) integrated circuit substrate, forming a first metal layer comprising a radiating element;
- and
- forming a second metal layer comprising a first conductor coupled to said radiating element;
- wherein said first conductor and said radiating element are mutually coupled to form an antenna to wirelessly communicate a signal;
- and
- wherein said radiating element is formed of raised metal on a top metal layer of said CMOS integrated circuit device.
The method of claimed 21, further comprising forming a first and second ground plane disposed on said second metal layer,and forming said first conductor comprises forming said first conductor disposed between said first and second ground planes and radiating element to substantially overlap said first conductor to form a coplanar waveguide transmission line.
Dependencies are inferred from the claim text.