Device and method for generating a low-voltage reference

A memory device, comprising:

• a memory array;
• and
• a voltage reference generator configured to facilitate data retention with the memory array, including:
• a bandgap voltage reference circuit including a first complementary-to-absolute-temperature (CTAT) signal and a second complementary-to-absolute-temperature (CTAT) signal;
• and
• a differential sensing device for generating a reference signal substantially insensitive to temperature variations over an operating temperature range from sensing the first and second CTAT signals.

A semiconductor substrate on which is fabricated a memory device, comprising:

• an array of memory cells;
• and
• a voltage reference generator configured to facilitate data retention with the memory array, including:
• a bandgap voltage reference circuit including a first complementary-to-absolute-temperature (CTAT) signal and a second complementary-to-absolute-temperature (CTAT) signal;
• and
• a differential sensing device for generating a reference signal substantially insensitive to temperature variations over an operating temperature range from sensing the first and second CTAT signals.

A method for generating a reference signal, comprising:

• generating a first complementary-to-absolute-temperature (CTAT) signal;
• generating a second complementary-to-absolute-temperature (CTAT) signal;
• and
• generating the reference signal substantially insensitive to temperature variations over an operating temperature range from differentially sensing the first and second CTAT signals.