Booster circuit, semiconductor device, and electronic apparatus

A booster circuit comprising:

• a first transistor;
• a second transistor;
• a third transistor;
• a capacitor element;
• a diode;
• a power supply terminal;
• and an inverter,
• wherein one electrode of the first transistor connected to the power supply terminal and a gate electrode of the second transistor connected to the power supply terminal, being maintained at a predetermined potential;
• wherein an output of the inverter is connected to a gate electrode of the third transistor;
• wherein one electrode of the third transistor is connected to a gate electrode of the first transistor and one electrode of the second transistor;
• wherein the other electrode of the first transistor is connected to the other electrode of the second transistor;
• and
• wherein the diode is connected to the other electrode of the first transistor so as to be forwardly biased.

A booster circuit comprising:

• a first transistor;
• a second transistor;
• a first capacitor element;
• a second capacitor element;
• a diode;
• a power supply terminal;
• and an inverter,
• wherein one electrode of the first transistor connected to the power supply terminal is maintained at a predetermined potential;
• wherein an output of the inverter is connected to a gate electrode of the second transistor and the other electrode of the first transistor through the second capacitor element;
• wherein an input of the inverter is connected to a gate electrode of the first transistor and one electrode of the second transistor through the first capacitor element;
• and
• wherein the diode is connected to the gate electrode of the first transistor so as to be forwardly biased.

A booster circuit comprising:

• a first transistor;
• a second transistor;
• a first capacitor element;
• a second capacitor element;
• a diode;
• a power supply terminal;
• and an inverter,
• wherein the diode is connected to the first capacitor element and one electrode of the first transistor so as to be forwardly biased, and the one electrode of the first transistor is connected to the power supply terminal and maintained at a predetermined potential;
• wherein an output of the inverter is connected to a gate electrode of the second transistor and the other electrode of the first transistor through the second capacitor element;
• and
• wherein an input of the inverter is connected to the one electrode of the first transistor through a gate electrode of the first transistor and the first capacitor element.

A booster circuit comprising:

• a first transistor;
• a second transistor;
• a first capacitor element;
• a second capacitor element;
• a diode;
• a power supply terminal;
• and an inverter,
• wherein the diode is connected to the first capacitor element and one electrode of the second transistor, and one electrode of the first transistor connected to the power supply terminal is maintained at a predetermined potential;
• wherein an output of the inverter is connected to a gate electrode of the second transistor and one electrode of the first transistor through the second capacitor element;
• and
• wherein an input of the inverter is connected to a gate electrode of the first transistor and connected to the one electrode of the second transistor through the first capacitor element.

A booster circuit comprising:

• a first transistor;
• a second transistor;
• a third transistor;
• a first capacitor element;
• a power supply terminal;
• and a diode,
• wherein the diode is connected to the first capacitor element, a gate electrode of the first transistor and one electrode of the second transistor, and one electrode of the first transistor connected to the power supply terminal is maintained at a predetermined potential;
• wherein the gate electrode of the first transistor and the one electrode of the second transistor are connected to a gate electrode of the third transistor through the first capacitor element;
• wherein one electrode of the first transistor is connected to the other electrode of the second transistor;
• and
• wherein the other electrode of the first transistor is connected to one electrode of the third transistor.

A booster circuit comprising:

• a first transistor;
• a second transistor;
• a third transistor;
• a fourth transistor;
• a first capacitor element;
• a second capacitor element;
• a third capacitor element;
• a power supply terminal;
• and an inverter,
• wherein one electrode of the first transistor connected to the power supply terminal is maintained at a predetermined potential and connected to one electrode of the third transistor;
• wherein an output of the inverter is connected to a gate electrode of the second transistor and connected to a gate electrode of the third transistor and one electrode of the fourth transistor through the first capacitor element;
• wherein an input of the inverter is connected to a gate electrode of the first transistor and one electrode of the second transistor through the second capacitor element, and connected to a gate electrode of the fourth transistor and the other electrode of the third transistor through the third capacitor element;
• wherein the other electrode of the first transistor is connected to the gate electrode of the third transistor and the one electrode of the fourth transistor;
• and
• wherein the other electrode of the second transistor is connected to the other electrode of the fourth transistor.