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US 7,256,500 B2Granted
Semiconductor device using metal nitride as insulating film
AssigneeFujitsu Limited
InventorsNoriyuki Shimizu, Yoshiyuki Nakao, Hiroki Kondo, Takashi Suzuki, Nobuyuki Nishikawa
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Abstract
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating film. A recess is formed through the second insulating film and reaches a position deeper than an upper surface of the first insulating film. A conductive member is buried in the recess. A semiconductor device is provided whose interlayer insulating film can be worked easily even if it is made to have a low dielectric constant.
Claims2
A semiconductor device comprising:
- a first insulating film formed on a semiconductor substrate;
- a second insulating film consisting of zirconium nitride and formed on said first insulating film;
- a recess formed through said second insulating film and reaching a position deeper than an upper surface of said first insulating film;
- a conductive member filled in said recess;
- and
- a third insulating film formed on said second insulating film, said recess extending through said third insulating film and consisting of inorganic insulating material containing silicon as a constituent element.
3 more elements
Dependencies are inferred from the claim text.