Resistance-reduced semiconductor device and methods for fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chun Huang, Jyu-Horng Shieh, Ju-Wang Hsu
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Abstract
Semiconductor devices and methods for fabricating the same. The semiconductor device includes a resistance-reduced transistor with metallized bilayer overlying source/drain regions and gate electrode thereof. A first dielectric layer with a conductive contact overlies the resistance-reduced transistor. A second dielectric layer having a first conductive feature overlies the first dielectric layer. A third dielectric layer with a second conductive feature overlies the second dielectric layer, forming a conductive pathway down to the top surface of the metallized bilayer over one of the source/drain regions or the gate electrode layer.
Claims8
A resistance-reduced semiconductor device, comprising:
- a resistance-reduced transistor, comprising:
- a gate stack on a silicon-containing substrate;
- a pair of source/drain regions in the silicon-containing substrate, oppositely adjacent to the gate stack;
- a metallized bilayer overlying each source/drain region to thereby reduce a resistance thereof, wherein the metallized bilayer comprises a metal top layer;
- a first dielectric layer having a conductive contact, overlying the resistance-reduced transistor;
- a second dielectric layer having a first conductive feature, overlying the first dielectric layer, wherein the first conductive feature and the conductive contact electrically form a conductive pathway down to the top metal layer over one of the source/drain regions;
- a third dielectric layer having a second conductive feature, overlying the second dielectric layer;
- and
- a first conductive cap layer partially overlying the first conductive feature, wherein the first conductive cap layer exposes a portion of the top surface of the first conductive feature to thereby contact the second conductive feature directly and the first conductive feature.
Dependencies are inferred from the claim text.