Semiconductor device having bonding pad of the first chip thicker than bonding pad of the second chip
AssigneeNEC Electronics Corporation
InventorMitsuru Oota
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Abstract
To provide a semiconductor device that enables high integration degree, and a manufacturing method therefor. A multi-chip module according to an embodiment of the present invention includes: a first semiconductor chip having a first bonding pad; a second semiconductor chip having a second bonding pad thinner than the first bonding pad; and a bonding wire connected with each of the first bonding pad and the second bonding pad, the first bonding pad being connected with a first bond side end portion of the bonding wire and the second bonding pad being connected with a second bond side end portion of the bonding wire.
Claims16
A semiconductor device, comprising:
- a first semiconductor chip having a first bonding pad, the first bonding pad having a first thickness;
- a second semiconductor chip having a second bonding pad, the second bonding pad having a second thickness thinner than the first thickness;
- and
- a bonding wire connected between the first and second bonding pads.
Dependencies are inferred from the claim text.