Photodiode with controlled current leakage
AssigneeUDT Sensors, Inc.
InventorsPeter Steven Bui, Narayan Dass Taneja
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Abstract
The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.
Claims9
A photodiode comprising:
- a front side;
- a plurality of electrical contacts in electrical communication with said front side;
- a first region wherein said first region is heavily doped with an impurity of a first conductivity type;
- a second region wherein said second region comprises a layer having a plurality of regions which are doped with alternating conductivity types wherein said plurality of regions doped with alternating conductivity types create a plurality of depletion regions that function as suction diodes;
- a first metallization layer on said front side;
- and
- a second metallization layer on said front side wherein said second metallization layer creates an aperture to an active area.
Dependencies are inferred from the claim text.