Double gate semiconductor device having a metal gate
AssigneeAdvanced Micro Devices, Inc.
InventorsShibly S. Ahmed, Haihong Wang, Bin Yu
Life of this patent
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Abstract
A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a source region formed on the insulating layer adjacent a first end of the conductive fin and a drain region formed on the insulating layer adjacent a second end of the conductive fin. The semiconductor device may further include a metal gate formed on the insulating layer adjacent the conductive fin in a channel region of the semiconductor device.
Claims16
A semiconductor device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a conductive fin formed on the insulating layer, the conductive fin including a plurality of side surfaces and a top surface;
- a source region formed on the insulating layer adjacent a first end of the conductive fin;
- a drain region formed on the insulating layer adjacent a second end of the conductive fin;
- a dielectric layer comprising hafnium formed on the top surface and side surfaces of the conductive fin in the channel region of the semiconductor device;
- and
- a metal gate formed on the insulating layer adjacent the conductive fin in a channel region of the semiconductor device, the metal gate having a thickness ranging from about 700 Å to about 2,000 Å.
A semiconductor device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a silicon fin formed on the insulating layer, the silicon fin including a plurality of side surfaces and a top surface;
- a dielectric layer comprising hafnium formed on the top surface and side surfaces of the silicon fin in the channel region of the semiconductor device;
- a source region formed on the insulating layer adjacent a first end of the silicon fin;
- a drain region formed on the insulating layer adjacent a second end of the silicon fin;
- and
- a metal gate formed on the insulating layer adjacent the silicon fin in a channel region of the semiconductor device, the metal gate having a thickness ranging from about 700 Å to about 2,000 Å.
A semiconductor device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a conductive fin formed on the insulating layer, the conductive fin including a plurality of side surfaces and a top surface and having a thickness ranging from about 300 Å to about 1,500 Å;
- a dielectric layer comprising hafnium formed on the top surface and side surfaces of the silicon fin;
- a source region formed on the insulating layer adjacent a first end of the silicon fin;
- a drain region formed on the insulating layer adjacent a second end of the silicon fin;
- and
- a metal gate comprising titanium or tantalum formed on the insulating layer and over a portion of the conductive fin, the metal gate having a thickness ranging from about 700 Å to about 2000 Å.
Dependencies are inferred from the claim text.