Electronic device including discontinuous storage elements and a process for forming the same

An electronic device comprising:

• a substrate including a primary surface and a trench, wherein the trench extends into a semiconductor material and comprises:
• a ledge;
• a bottom that lies at a depth deeper than the ledge;
• a first wall that lies between the primary surface and the ledge;
• a second wall that lies between the ledge and the bottom;
• a first portion of the trench that lies adjacent to the first wall;
• a second portion of the trench that lies adjacent to the second wall;
• and
• the first portion is wider than the second portion;
• discontinuous storage elements, wherein:
• a first portion of the discontinuous storage elements lie adjacent to the first wall;
• and
• a second portion of the discontinuous storage elements lie adjacent to the second wall;
• a first gate electrode overlying the ledge;
• a second gate electrode overlying the bottom;
• a first doped region lying below the bottom of the trench;
• and
• a second doped region lying along the primary surface of the substrate outside of the trench.

A process for forming an electronic device an array, the process comprising:

• forming a trench within a substrate, wherein:
• the trench extends into a semiconductor material;
• the trench includes a ledge and a bottom;
• and
• the bottom lies at a depth deeper than the ledge;
• forming discontinuous storage elements, wherein a trench portion of the discontinuous storage elements lies within the trench;
• forming a first gate electrode overlying the ledge, wherein the first gate electrode has a sidewall spacer shape;
• and
• forming a second gate electrode overlying the bottom, wherein the second gate electrode has a sidewall spacer shape.