Semiconductor storage device which includes a hydrogen diffusion inhibiting layer

A semiconductor storage device comprising:

• a storage capacity part having a first electrode comprised of platinum, a high dielectric constant or ferroelectric film which is provided in contact with the first electrode, and a second electrode provided in contact with the high dielectric constant or ferroelectric film;
• a hydrogen diffusion preventing layer provided on the storage capacity part;
• and an adsorption inhibiting layer provided so as to substantially completely cover the hydrogen diffusion preventing layer,
• wherein the adsorption inhibiting layer is a layer made of any of silver, aluminum, silicon, lead, bismuth, gold, zinc, cadmium, indium, germanium, and tin.

A semiconductor device comprising:

• an active device;
• a capacitor having a first electrode comprised of platinum, a second electrode, and a high dielectric constant or ferroelectric film provided between the first and second electrodes;
• an adsorption inhibiting layer provided so as to substantially completely cover the hydrogen diffusion preventing layer,
• a hydrogen diffusion preventing layer formed between the active device and the capacitor,
• wherein the adsorption inhibiting layer constructs a part of the second electrode.

A semiconductor storage device comprising:

• a capacitor having a first electrode comprised of platinum, a high dielectric constant or ferroelectric film which is provided in contact with the first electrode, and a second electrode provided in contact with the high dielectric constant or ferroelectric film;
• a hydrogen diffusion preventing layer provided on the capacitor part;
• and
• a hydrogen adsorption inhibiting layer provided on the hydrogen diffusion preventing layer,
• wherein the hydrogen adsorption inhibiting layer is comprised of any one of silver, aluminum, lead, bismuth, gold, zinc, cadmium, indium, germanium and tin,
• characterized in that a reaction preventing layer is provided between the hydrogen diffusion preventing layer and the adsorption inhibiting layer,
• wherein the reaction preventing layer is comprised of any one of titanium, tungsten, tantalum, molybdenum or an alloy or nitride of any of these materials.