Thin-film field-effect transistors and making method
AssigneeShin-Etsu Chemical Co., Ltd.
InventorIkuo Fukui
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Abstract
In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and thereafter, forming a semiconductor layer thereon.
Claims7
A thin-film field-effect transistor having a metal/insulator/semiconductor structure, wherein the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan.
A method for preparing a thin-film field-effect transistor, comprising the steps of applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate electrode in the form of a metal layer, drying the applied solution to form an insulator layer, and thereafter, forming a semiconductor layer thereon.
Dependencies are inferred from the claim text.