Rare earth element-doped silicon/silicon dioxide lattice structure

A method for forming an electroluminescence (EL) device, the method comprising:

• forming a bottom electrode on a substrate;
• DC sputtering a layer of amorphous Si overlying the substrate;
• co-DC sputtering a rare earth element with the amorphous Si;
• in response to the co-DC sputtering, doping the amorphous Si layer with the rare earth element;
• DC sputtering a layer of SiO2 overlying the rare earth element-doped Si;
• forming a lattice structure;
• annealing;
• and
• forming a top electrode overlying the lattice structure.

A rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure, the structure comprising:

• a substrate;
• a lattice structure overlying the substrate including:
• a rare earth element-doped Si layer;
• and
• a SiO2 layer;
• and,
• wherein the lattice structure includes a number of alternating layer sets in the range between 5 and 60, where each set includes a rare earth element-doped Si layer and a SiO2 layer.

An electroluminescence device comprising:

• a bottom electrode;
• a lattice structure overlying the bottom electrode with a plurality of alternating layers including:
• a rare earth element-doped Si layer;
• and
• a SiO2 layer;
• and
• a top electrode overlying the lattice structure.

A rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure, the structure comprising:

• a bottom electrode substrate;
• a lattice structure overlying the substrate including:
• a rare earth element-doped Si layer;
• a SiO2 layer;
• and
• a top electrode overlying the lattice structure.