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AssigneeCiba Specialty Chemicals Corporation
InventorsHilmar Weinert, Patrice Bujard, Rüdiger Hainz
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A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOy may be oxidised to SiO2 in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOy may be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.
A method of producing plane-parallel structures of SiOy, wherein 0.95≦y≦1.8, comprising the steps:
Plane-parallel structures of SiOy, wherein 1≦y≦5 1.8, the particles of which have a length of from 2 μm to 5 mm, a width of from 2 μm to 2 mm, and a thickness of from 20 nm to 2 μm, and a ratio of length to thickness of at least 2:1, the core of SiOy having two substantially parallel faces, the distance between which is the shortest axis of the core.
A plane-parallel pigment based on plane-parallel SiOz substrates, which comprises, on the surface of the SiOz substrates, a layer comprising silicon carbide (SiC), wherein 0.95≦z≦2.
A plane-parallel pigment based on plane-parallel SiOzsubstrates, which comprises, on the surface of the SiOzsubstrates, a layer comprising silicon carbide (SiC) and silicon nitride (Si3N4), wherein 0.95≦z≦2.
A plane-parallel pigment based on plane-parallel SiOz substrates, which comprises, on the surface of the SiOz substrates, a layer comprising silicon nitride (Si3N4, wherein 0.95≦z≦2.
A plane-parallel pigment comprising at least one SiOz layer, which comprises, a top surface and side surfaces of the SiOz layer, which comprises on said top and side surfaces a layer comprising silicon carbide (SiC), wherein 0.95≦z≦2.
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