Display device having a structure for preventing the deterioration of a light emitting device

A display device comprising:

• a first semiconductor and a second semiconductor on an insulating surface;
• a gate insulating film over the first semiconductor;
• a first metal layer over the gate insulating film;
• a passivation film over the first metal layer;
• a second metal layer over the passivation film;
• a flattening film aver the second metal layer;
• a barrier film over the flattening film;
• a third metal layer over the barrier film;
• the gate insulating film over the second semiconductor;
• a fourth metal layer over the gate insulating film;
• the passivation film over the fourth metal layer;
• a fifth metal layer over the passivation film;
• the flattening film over the fifth metal layer;
• a sixth metal layer over the barrier film;
• wherein a second opening is formed inside side faces of the first opening, the second opening being formed in a lamination having the gate insulating film, the passivation film, and the barrier film;
• and
• wherein the third metal layer is connected to the first semiconductor via the first opening and the second opening;
• wherein a first capacitor element comprises the second semiconductor, the gate insulating film, and the fourth metal layer;
• wherein a second capacitor element comprises the fourth metal layer, the passivation film, and the fifth metal layer;
• and
• wherein a third capacitor element comprises the fifth metal layer, the barrier film, and the sixth metal layer.

A display device comprising:

• a first semiconductor and a second semiconductor on an insulating surface;
• a gate insulating film over the first semiconductor;
• a first metal layer over the gate insulating film;
• a passivation film over the first semiconductor;
• a second metal layer over the passivation film;
• a flattening film over the second metal layer;
• a barrier film over the flattening film;
• a third metal layer over the barrier film;
• the gate insulating film over the second semiconductor;
• a fourth metal layer over the gate insulating film;
• the passivation film over the fourth metal layer;
• a fifth metal layer over the passivation film;
• the flattening film over the fifth metal layer;
• a sixth metal layer over the barrier film;
• wherein a first opening formed in the flattening film is covered by the barrier film;
• wherein a second opening is formed inside side faces of the first opening, the second opening being formed in a lamination having the gate insulating film, the passivation film, and the barrier film;
• and
• wherein the third metal layer is connected to the first semiconductor via the first opening and the second opening;
• wherein a capacitor element comprises the fourth metal layer, the passivation film, and the fifth metal layer.