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US 7,256,417 B2Granted
Type II quantum well mid-infrared optoelectronic devices
AssigneeWisconsin Alumni Research Foundation
InventorsLuke J. Mawst, Nelson Tansu, Jerry R. Meyer, Igor Vurgaftman
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Abstract
Semiconductor optoelectronic devices such as diode lasers are formed on InP substrates with an active region with an InAsN or InGaAsN electron quantum well layer and a GaAsSb or InGaAsSb hole quantum well layer which form a type II quantum well. The active region may be incorporated in various devices to provide light emission at relatively long wavelengths, including light emitting diodes, amplifiers, surface emitting lasers and edge-emitting lasers.
Claims60
An optoelectronic device comprising:
- a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of a semiconductor containing antimony and at least one electron quantum well layer adjacent to the hole quantum well layer which comprises a semiconductor containing nitrogen to provide a type II quantum well structure, wherein the semiconductor containing nitrogen is InAsN.
An optoelectronic device comprising:
- a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of a semiconductor containing antimony and at least one electron quantum well layer adjacent to the hole quantum well layer which comprises a semiconductor containing nitrogon to provide a type II quantum well structure, wherein there is an electron quantum well layer on each side of the hole quantum well layer and there is a barrier layer adjacent to each electron guantum well layer on each side of the hole quantum well layer to provide a conduction band profile for the active region having a W-shaped configuration, and further wherein there is an optical confinement layer adjacent to each barrier layer, the optical confinement layers comprising InP.
An optoelectronic device comprising:
- a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer that is an InGaAsSb layer and an electron quantum well layer of InAsN or InGaAsN on each side of the hole quantum well layer to provide a type II quantum well structure.
A semiconductor laser comprising:
- (a) a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of a semiconductor containing antimony and at least one electron quantum well layer adjacent to the hole quantum well layer which comprises a semiconductor containing nitrogen to provide a type II quantum well structure, wherein the semiconductor containing antimony is InGaAsSb;
- and
- (b) means for providing optical feedback to provide lasing action in the active region, wherein the semiconductor containing antimony is InGaAsSb.
An optoelectonic device comprising:
- a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of a semiconductor containing antimony and at least one electron quantum well layer adjacent to the hole quantum well layer which comprises a semiconductor containing nitrogen to provide a type II quantum well structure, wherein the semiconductor containing antimony is InGaAsSb.
A semiconductor laser comprising:
- (a) a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of a semiconductor containing antimony and at least one electron quantum well layer adjacent to the hole quantum well layer which comprises a semiconductor containing II quantum well structure;
- and
- (b) means for providing optical feedback to provide lasing action in the active region, wherein there is an electron quantum well layer on each side of the hole quantum well layer and there is a barrier layer adjacent to each electron quantum well layer on each side of the hole quantum well layer to provide a conduction band for the active region having a W-shaped configuration, and further wherein the electron quantum well layers and hole quantum well layer form a first quantum well stage, and wherein the active region comprises a plurality of quantum well stage adjacent to each other each having electron quantum well layers surrounding a hole quantum well layer, the laser further including a baffler layer of GaInP between each quantum well stage.
An optoelectronic device comprising:
- a multi-layer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of GaAsSb or InGaAsSb and an electron quantum well layer of InAsN or InGaAsN on each side of the hole quantum well layer to provide a type II quantum well structure, wherein the electron quantum well layers and the hole quantum well layer form a first quantum well stage, and wherein the active region comprises a plurality of quantum well stages adjacent to each other, the device further including a barrier layer of GaInP between each quantum well stage to form a conduction band profile having a W-shaped configuration.
An optoelectronic device comprising:
- a multilayer semiconductor structure including an InP substrate and an active region, the active re lion comprising at least a hole quantum well layer of GaAsSb and a electron quantum well layer of InAsN on each side of the hole quantum well layer to provide a type II quantum well structure wherein the electron quantum well layers are in compressive strain and the hole quantum well layer is in compressive strain.
A semiconductor laser comprising:
- (a) a multilayer semiconductor structure including an InP substrate and an active region, the active region comprising at least a hole quantum well layer of a semiconductor containing antimony and at least one electron quantum well layer adjacent to the hole quantum well layer which comprises a semiconductor containing nitrogen to provide a type II quantum well structure, wherein the semiconductor containing nitrogen is InAsN;
- and
- (b) means for providing optical feedback to provide lasing action in the active region.
Dependencies are inferred from the claim text.