Manufacture of semiconductor device having insulation film of high dielectric constant
AssigneeFujitsu Limited
InventorMasaomi Yamaguchi
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Abstract
Disclosed is a method of manufacturing a semiconductor device which can form, as a gate insulation film, an oxide film of Hf1-xAlx (0<x<0.3) having a small shift in flat band voltage. The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, which contains metal compound of Hf and metal compound of Al in carrier gas, and hydrogen gas to a surface of the heated silicon substrate, and depositing on the silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.
Claims21
A method of manufacturing a semiconductor device comprising the steps of:
- (a) heating a silicon substrate in a reaction chamber;
- (b) forming a oxide layer;
- and
- (c) supplying film-forming gas containing source gas, which contains metal compound of Hf and O, and metal compound of Al in carrier gas, and hydrogen gas to a surface of said heated silicon substrate, and depositing on said silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) heating a silicon substrate in a reaction chamber;
- (b) forming an oxide layer;
- and
- (c) supplying film-forming gas containing source gas, which contains metal compound of Hf and O, and metal compound of Al in carrier gas, and hydrogen gas to a surface of said heated silicon substrate, and depositing on said silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon nitride, by thermal CVD.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) heating a silicon substrate in a reaction chamber;
- (b) forming an oxide layer;
- and
- (c) supplying film-forming gas containing source gas, which contains metal compound of Hf and O, and metal compound of Al in carrier gas, and hydrogen gas to a surface of said heated silicon substrate, and depositing on said silicon substrate an Hf1-xAlxO film (0.1<x<0.3) as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.
Dependencies are inferred from the claim text.