Method for forming a metal oxide film

A method for forming a semiconductor device comprising:

• depositing a monoatomic film including a metal on a base in an oxygen-free environment;
• and
• depositing a metal oxide film including an oxide of the metal on the monoatomic film using a CVD technique;
• and
• before said monoatomic film depositing step, the step of supplying oxidizing gas onto a surface of said base.

A semiconductor device formed by a method, the method comprising:

• depositing a monoatomic film including a metal an a base in an oxygen-free environment;
• and
• depositing a metal oxide film including an oxide of the metal on the monoatomic film using a CVD technique;
• and
• before said monoatomic film depositing step, the step of supplying oxidizing gas onto a surface of said base.

A method to form a semiconductor device comprising the steps of:

• depositing a monoatomic seed layer containing a metal on a base by using a metal source including a compound containing said metal and no oxygen, said deposition done via an atomic layer deposition (ALD) technique;
• and
• introducing an oxygen source to convert said monoatomic seed layer containing metal to a monoatomic seed layer containing a metal oxide and depositing a film of the same metal oxide on said monoatomic seed layer via a CVD technique;
• and
• before said monoatomic seed layer depositing step, the step of supplying oxidizing gas onto a surface of said base.

A method for forming a semiconductor device comprising the steps of:

• forming a bottom electrode having thereon hemi-spherical grains;
• forming a silicon nitride film on said bottom electrode by using a rapid thermal nitration technique;
• forming a capacitor insulator film on said silicon nitride film;
• and
• forming a top electrode on said capacitor insulator film, said capacitor insulator film forming step including:
• providing oxidizing gas to bind oxygen atoms onto a surface of said silicon nitride film;
• depositing a monoatomic film including a metal, by using an atomic layer deposition technique using a source gas including said metal, onto said silicon nitride film bound with said oxygen atoms;
• and
• forming, subsequent to said depositing step, a metal oxide film including oxide of said metal on said monoatomic film by using a CVD technique.

A method for forming a semiconductor device comprising the steps of:

• forming a bottom electrode having thereon hemi-spherical grains;
• forming a silicon nitride film on said bottom electrode by using a rapid thermal nitration technique;
• forming a capacitor insulator film on said silicon nitride film;
• and
• forming a top electrode on said capacitor insulator film, said capacitor insulator film forming step including;
• providing oxidizing gas to bind oxygen atoms onto a surface of said silicon nitride film;
• depositing a monoatomic film including a metal by using an atomic layer deposition technique using a source gas including said metal, onto said silicon nitride film bound with said oxygen atoms;
• oxidizing said monoatomic film to form a metal oxide film including said metal;
• and
• depositing another metal oxide film including oxide of said metal onto said metal oxide film by using a CVD technique.