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US 7,256,139 B2Granted
Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices
AssigneeApplied Materials, Inc.
InventorsFarhad Moghadam, Jun Zhao, Timothy Weidman, Rick J. Roberts, Li-Quan Xia, Alexandros T. Demos
Life of this patent
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Abstract
One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
Claims19
A method of depositing a low dielectric constant film, comprising:
- chemical vapor depositing a low dielectric constant film comprising metastable groups using a silicon-containing precursor comprising a methyl group bonded to silicon and an alkoxy group bonded to silicon and one or more hydrocarbon precursors selected from the group consisting of norbornadiene and butadiene;
- and
- treating the low dielectric constant film to eject the metastable groups.
A method of depositing a low dielectric constant film, comprising:
- chemical vapor depositing a low dielectric constant film comprising metastable groups using a silicon-containing precursor comprising a methyl group bonded to silicon, two alkoxy groups bonded to silicon, and H bonded to silicon and one or more hydrocarbon precursors selected from the group consisting of norbornadiene and butadiene;
- and
- treating the low dielectric constant film to eject the metastable groups.
A method of depositing a low dielectric constant film, comprising:
- chemical vapor depositing a low dielectric constant film comprising metastable groups using diethoxymethylsilane and norbornadiene as precursors;
- and
- electron beam treating the low dielectric constant film to eject the metastable groups.
Dependencies are inferred from the claim text.