Method of forming contact plug on silicide structure

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a semiconductor element on a substrate, said semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over said element and an insulating layer formed over said first etch stop layer;
• (b) forming an opening through said insulating layer over said contact region at least to said first etch stop layer;
• (c) removing a portion of said first etch stop layer contacting a selected contact region using a non-CFO based etch process to form a contact opening to said contact region;
• and
• (d) filling said contact opening with conductive material to form a contact.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a semiconductor element on a substrate, said semiconductor element having at least one metal silicide contact region, a first etch stop layer formed over said element and an insulating layer formed over said first etch stop layer;
• (b) forming an opening through said insulating layer over said contact region at least to said first etch stop layer;
• (c) removing a portion of said first etch stop layer contacting a selected contact region using a non-CFO based etch process to form a contact opening to said contact region;
• and
• (d) filling said contact opening with conductive material to form a contact.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a semiconductor element on a substrate, wherein said semiconductor element comprises a gate element having a channel length of less than or equal to about 0.13 μm, said semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over said element and an insulating layer formed over said first etch stop layer;
• (b) forming an opening through said insulating layer over said contact region at least to said first etch stop layer;
• (c) removing a portion of said first etch stop layer contacting a selected contact region using a process that does not substantially oxidize with said contact region, to form a contact opening to said contact region;
• and
• (d) filling said contact opening with conductive material to form a contact.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a semiconductor element on a substrate, wherein said semiconductor element comprises a gate element having a channel length of less than or equal to about 0.13 μm. said semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over said element and an insulating layer formed over said first etch stop layer;
• (b) forming an opening through said insulating layer over said contact region at least to said first etch stop layer;
• (c) removing a portion of said first etch stop layer contacting a selected contact region using a non-CFO based etch process to form a contact opening to said contact region;
• and
• (d) filling said contact opening with conductive material to form a contact.

A method of manufacturing a semiconductor device, comprising the steps of:

• (a) forming a semiconductor element on a substrate, said semiconductor element having at least one nickel silicide contact region, a first etch stop layer formed over said element and an insulating layer formed over said first etch stop layer;
• (b) forming an opening through said insulating layer over said contact region at least to said first etch stop layer;
• (c) removing a portion of said first etch stop layer contacting a selected contact region using plasma etch using a mix of approximately 0.01-10% nitrogen fluoride or hydrogen fluoride, and helium or argon gas, to form a contact opening to said contact region;
• and
• (d) filling said contact opening with conductive material to form a contact.