Method to eliminate plating copper defect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Chin Tsao, Chi-Wen Liu, Hsien-Ping Feng, Hsi-Kuei Cheng, Steven Lin, Min-Yuan Cheng
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Abstract
A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.
Claims17
A method of forming a metal layer, comprising the steps of:
- providing a semiconductor structure;
- forming a dielectric layer over the semiconductor structure, wherein the dielectric layer comprises an opening formed therein;
- lining the opening with a metal seed layer;
- treating the metal seed layer with a wet or dry cleaning process;
- and
- forming a metal layer upon the metal seed layer;
- wherein the wet cleaning process comprises a scrubber cleaning process and the dry cleaning process comprises a helium plasma etch or an argon plasma etch.
A method of electrochemical plating metal, comprising the steps of:
- providing a semiconductor structure;
- forming a dielectric layer over the semiconductor structure, the dielectric layer having a defined surface;
- lining the defined surface with a metal seed layer;
- treating the metal seed layer with a wet or dry cleaning process;
- and
- electrochemically plating a metal layer upon the metal seed layer;
- wherein the wet cleaning process comprises a scrubber cleaning process and the dry cleaning process comprises a helium plasma etch or an argon plasma etch.
A method of electrochemical plating metal, comprising the steps of:
- providing a semiconductor substrate;
- forming a dielectric layer over the semiconductor substrate, the dielectric layer having an opening formed therein;
- lining the opening with a copper seed layer;
- treating the copper seed layer with a wet or dry cleaning process to remove contaminants therefrom;
- and,
- electrochemically plating a copper layer upon the copper seed layer;
- wherein the wet cleaning process comprises a scrubber cleaning process and the dry cleaning process comprises a helium plasma etch or an argon plasma etch.
Dependencies are inferred from the claim text.