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US 7,256,119 B2Granted
Semiconductor device having trench structures and method
AssigneeSemiconductor Components Industries, LLC
InventorsGordon M. Grivna, Peter J. Zdebel
Life of this patent
Estimating the term…
Abstract
In one embodiment, a pair of sidewall passivated trench contacts is formed in a substrate to provide electrical contact to a sub-surface feature. A doped region is diffused between the pair of sidewall passivated trenches to provide low resistance contacts.
Claims20
A method of forming a semiconductor device comprising the steps of:
- providing a substrate having a major surface and a sub-surface feature to be contacted;
- forming a first trench in the substrate and extending from the major surface;
- forming a second trench in the substrate and extending from the major surface;
- forming a blocking layer overlying exposed surfaces of the first and second trenches;
- forming a first conductive layer overlying the blocking layer in the first trench, wherein the first conductive layer is coupled to the sub-surface feature through a first opening in the blocking layer;
- and
- forming a second conductive layer overlying the blocking layer in the second trench, wherein the second conductive layer is coupled to the substrate through a second opening in the blocking layer.
4 more elements
A method for forming a semiconductor device including the steps of:
- providing a semiconductor substrate having a major surface and a sub-surface feature;
- forming a first trench in the semiconductor substrate in proximity to the sub-surface feature;
- forming a second trench in the semiconductor substrate in proximity to the first trench;
- forming a first blocking layer overlying surfaces of the first trench;
- forming a second blocking layer overlying surfaces of the second trench;
- forming openings in the first and second blocking layers;
- forming a first conductive layer overlying the first and second blocking layers, wherein the first conductive layer is coupled to the sub-surface feature through the openings;
- and
- forming a doped region between the first and second trenches, wherein the first and second trenches form a diffusion shield to control lateral diffusion of the doped region.
6 more elements
A process for forming a semiconductor device having a plurality of trenches including the steps or:
- providing a semiconductor substrate having a major surface and a sub-surface feature;
- forming the plurality of trenches including first and second trenches in the semiconductor substrate and extending from the major surface, wherein the first trench overlies the sub-surface feature and extends thereto, and wherein the second trench overlies another portion of the semiconductor substrate;
- forming a blocking layer overlying sidewall surfaces of the first and second trenches, wherein at least portions of lower surfaces of the first and second trenches are devoid of the blocking layer;
- forming a first polycrystalline semiconductor layer at least within the first and second trenches;
- and
- forming a second polycrystalline semiconductor layer within the second trench but not the first trench, wherein the second polycrystalline semiconductor layer is coupled to the semiconductor substrate within the second trench.
3 more elements
Dependencies are inferred from the claim text.