Semiconductor device using low-K material as interlayer insulating film and its manufacture method
AssigneeFujitsu Limited
InventorsShun-ichi Fukuyama, Tamotsu Owada, Ken Sugimoto
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Abstract
A semiconductor element is formed over a surface of a semiconductor substrate. A first insulating film is formed over the surface of the semiconductor substrate, the first insulating film covering the semiconductor element. A second insulating film is formed over the first insulating film, the second insulating film having a dielectric constant lower than that of the first insulating film. A first wiring pattern is formed over the second insulating film. A conductive connection member buried in the second and first insulating films electrically interconnects the first wiring pattern and semiconductor element.
Claims6
A method of manufacturing a semiconductor device comprising steps of:
- (a) forming a semiconductor element on a surface of a semiconductor substrate;
- (b) forming a first insulating film made of insulating material directly on the surface of the semiconductor substrate by a vapor deposition method, the first insulating film covering the semiconductor element;
- (b1) planarizing a surface of the first insulating film;
- (c) forming a second insulating film over the first insulating film by a coating method, the second insulating film being made of insulating material having a lower dielectric constant than the first insulating film;
- (d) forming a via hole through the second insulating film and the first insulating film;
- (e) burying a conductive plug in the via hole:
- (f) forming a first wiring pattern over the second insulating film, the first wiring pattern being connected to the conductive plug;
- and
- (g) forming multilevel wiring patterns over the first wiring pattern,
- wherein the first wiring pattern and the multilevel wiring patterns are made of metal, and the first wiring pattern is disposed in a lowest level among wiring patterns made of metal.
Dependencies are inferred from the claim text.