Method for reducing semiconductor die warpage

A method for reducing semiconductor die warpage comprising:

• selecting an at least partially transparent anti-warpage backgrinding tape;
• securing the anti-warpage backgrinding tape to a first side of a semiconductor wafer;
• backgrinding a second side of the wafer;
• securing the second side of the wafer to dicing tape so that the anti-warpage backgrinding tape is exposed;
• forming an array of grooves through the anti-warpage backgrinding tape and through the wafer to create individual die structure comprising semiconductor die with anti-warpage tape elements on first sides of the semiconductor die, the first sides of the semiconductor die corresponding to the first side of the wafer;
• the selecting step being carried out to permit sensing of guide markings on the first side of the semiconductor wafer during the array of grooves forming step;
• removing a chosen die structure from the dicing tape;
• adhering a second side of a chosen die of the chosen die structure to a substrate using an adhesive, the second side of the chosen die corresponding to the second side of the wafer;
• reducing adhesion between the anti-warpage tape element and the chosen die;
• and
• removing the anti-warpage tape element from the chosen die.