Manufacturing method of thin film device substrate

A method of manufacturing a thin film device substrate, comprising the steps of:

• forming, on a first substrate, a heat insulating film to hinder heat conduction;
• forming a semiconductor film on said heat insulating film;
• applying laser annealing to said semiconductor film;
• forming a thin film device with said semiconductor film which has been subjected to the laser annealing;
• bonding a second substrate onto said thin film device;
• peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive;
• and
• forming, over said heat insulating film, a peeling-off film that is to be peeled off in a subsequent step,
• wherein the step of peeling off said first substrate and said heat insulating film comprises the step of removing said peeling-off film,
• said heat insulating film is made of a film having a gap space;
• and
• the step of removing said peeling-off film comprises the step of making an etchant permeate through said gap space and thereby etching said peeling-off film.

A method of manufacturing a thin film device substrate,

• comprising the steps of:
• forming, on a first substrate, a heat insulating film to hinder heat conduction;
• forming a semiconductor film on said heat insulating film;
• applying laser annealing to said semiconductor film;
• forming a thin film device with said semiconductor film which has been subjected to the laser annealing;
• bonding a second substrate onto said thin film device;
• and
• peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive,
• wherein the step of peeling off said first substrate and said heat insulating film comprises the step of dividing said layered structure into a plural number, prior to said peeling-off.

A method of manufacturing a thin film device substrate;

• which comprises the steps of:
• forming, on a first substrate, a heat insulating film to hinder heat conduction;
• forming a semiconductor film on said heat insulating film;
• applying laser annealing to said semiconductor film;
• bonding a second substrate onto said semiconductor film which has been subjected to the laser annealing;
• peeling off said first substrate and said heat insulating film from a layered structure between said first substrate and said second substrate inclusive;
• and
• forming a thin film device with said semiconductor film which has been subjected to the laser annealing, wherein,
• said heat insulating film is a film having a gap space,
• said gap space is formed by means of etching,
• the step of forming a heat insulating film on a first substrate comprises the steps of:
• forming, on said first substrate, a primary film in which said gap space is to be formed in a subsequent step;
• forming, in a film formed on said primary film, a large number of through holes to reach said primary film;
• and
• supplying an etchant from said through holes and thereby forming said gap space in said primary film.