Method of forming a recessed buried-diffusion device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChiu Hung Yu, Yang Chung-Heng, Wu Lin-June
Life of this patent
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Abstract
A method of forming a device (and the device so formed) comprising the following steps. A structure having a gate structure formed thereover is provided. Respective low doped drains are formed within the structure at least adjacent to the gate structure. A pocket implant is formed within the structure. The structure adjacent the gate structure is etched to form respective trenches having exposed side walls. Respective first liner structures are formed at least over the exposed side walls of trenches. Respective second liner structures are formed over the first liner structures. Source/drain implants are formed adjacent to, and outboard of, second liner structures to complete formation of device.
Claims20
A method of forming a device, comprising the steps:
- providing a structure having a gate structure formed thereover;
- forming respective low doped drains within the structure at least adjacent to the gate structure;
- forming pocket implants within the structure;
- then etching the structure adjacent the gate structure to form respective trenches having exposed side walls;
- forming respective first liner structures at least over the exposed side walls of trenches;
- forming respective second liner structures over the first liner structures;
- and
- forming source/drain implants adjacent to, and outboard of, second liner structures to complete formation of device.
A method of forming a device, comprising the steps:
- providing a substrate having a gate structure formed thereover;
- the gate structure being comprised of N+ polysilicon, polysilicon or tungsten silicide;
- forming respective low doped drains within the substrate at least adjacent to the gate structure;
- forming pocket implants within the substrate;
- then etching the substrate adjacent the gate structure to form respective trenches having exposed side walls;
- forming respective first liner TEOS structures at least over the exposed side walls of trenches;
- forming respective second liner silicon nitride structures over the first liner structures;
- and
- forming source/drain implants adjacent to, and outboard of, second liner structures to complete formation of device.
Dependencies are inferred from the claim text.