Production method for semiconductor device
AssigneesNational Institute of Advanced Industrial Science and Technology, Sanyo Electric Co., Ltd.
InventorsRyoji Kosugi, Kenji Fukuda, Junji Senzaki, Mitsuo Okamoto, Shinsuke Harada, Seiji Suzuki
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Abstract
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a silicon oxide substrate, and following formation of the gate insulation film on the silicon oxide substrate with heat treatment for a given time at a temperature range of 900° C. to 1000° C. in an atmosphere containing not less than 25% H2O (water).
Claims9
A method for fabricating a semiconductor device comprising:
- forming a gate insulation film on a silicon carbide substrate;
- and
- heat-treating the gate insulation film for 1 to 5 hours at a temperature of 900° C. to 1000° C. in an atmosphere containing at least 25% water.
Dependencies are inferred from the claim text.