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US 7,256,081 B2Granted
Structure and method to induce strain in a semiconductor device channel with stressed film under the gate
AssigneeInternational Business Machines Corporation
InventorsHaining S. Yang, Huilong Zhu
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Abstract
A semiconductor device is provided with a stressed channel region, where the stresses film causing the stress in the stress channel region can extend partly or wholly under the gate structure of the semiconductor device. In some embodiments, a ring of stress film surround the channel region, and may apply stress from all sides of the channel. Consequently, the stress film better surrounds the channel region of the semiconductor device and can apply more stress in the channel region.
Claims7
A method of manufacturing a CMOS device with a stressed channel, comprising the steps of:
- forming a silicon island comprising a top surface and multiple sidewalls;
- forming a gate structure comprising at least a gate oxide and a gate stack on the top surface, the gate structure extending beyond a sidewall of the silicon island;
- and
- surrounding a portion of the silicon island around the multiple sidewalls with a stress film.
1 more element
Dependencies are inferred from the claim text.