Back to results
US 7,256,080 B2Granted
Method of fabricating thin film transistor
AssigneeSamsung SDI Co., Ltd.
InventorsByoung-Keon Park, Jin-Wook Seo, Ki-Yong Lee, Tae-Hoon Yang
Life of this patent
Estimating the term…
Abstract
A method of fabricating a thin film transistor includes preparing an insulating substrate; forming a first amorphous silicon layer on the substrate; forming a diffusion barrier layer pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the whole surface of the substrate; forming a metal silicide layer on the second amorphous silicide layer; and heat-treating the substrate to form first and second polysilicon layers.
Claims20
A method of fabricating a thin film transistor, comprising:
- preparing an insulating substrate;
- forming a first amorphous silicon layer on the substrate;
- forming a diffusion barrier layer pattern on a portion of the first amorphous silicon layer;
- forming a second amorphous silicon layer over the diffusion barrier layer;
- forming a metal silicide layer on the second amorphous silicon layer;
- and
- heat-treating the substrate to crystallize the first and second amorphous silicon layers, wherein the heat-treating forms a first polysilicon layer on regions of the substrate where there is no diffusion barrier layer pattern and a second polysilicon layer on regions of the substrate covered by the diffusion barrier layer pattern.
4 more elements
Dependencies are inferred from the claim text.