High mobility plane FinFETs with equal drive strength
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
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Abstract
An integrated circuit structure has a buried oxide (BOX) layer above a substrate, and a first-type fin-type field effect transistor (FinFET) and a second-type FinFET above the BOX layer. The second region of the BOX layer includes a seed opening to the substrate. The top of the first-type FinFET and the second-type FinFET are planar with each other. A first region of the BOX layer below the first FinFET fin is thicker above the substrate when compared to a second region of the BOX layer below the second FinFET fin. Also, the second FinFET fin is taller than the first FinFET fin. The height difference between the first fin and the second fin permits the first-type FinFET to have the same drive strength as the second-type FinFET.
Claims20
A method of forming an integrated circuit structure having a first-type fin-type field effect transistor (FinFET) and a second-type FinFET above a buried oxide (BOX) layer, said method comprising:
- providing a structure having a first-type layer and a second-type layer separated by said BOX layer,
- removing a portion of said first-type layer to expose a portion of said BOX layer;
- thinning an exposed portion of said BOX layer;
- forming a seed opening through said exposed portion of said BOX layer;
- growing a second-type material from said second-type layer through said seed opening;
- patterning said first-type layer into a first fin and said second-type material into a second fin;
- forming gate, source, and drain regions for said first fin to create said first-type FinFET;
- and
- forming gate, source, and drain regions for said second fin to create said second-type FinFET,
- wherein a first region of said BOX layer below said first fin is thicker above said second-type layer when compared to a second region of said BOX layer below said second fin, and
- wherein said second fin is taller than said first fin.
A method of forming an integrated circuit structure having a first-type fin-type field effect transistor (FinFET) and a second-type FinFET above a buried oxide (BOX) layer, said method comprising:
- providing a structure having a first-type layer and a second-type layer separated by said BOX layer,
- removing a portion of said first-type layer to expose a portion of said BOX layer;
- removing an exposed portion of said BOX layer to expose said second-type layer;
- forming a second-type material over an exposed portion of said second-type layer;
- patterning said first-type layer into a first fin and said second-type material into a second fin;
- forming gate, source, and drain regions for said first fin to create said first-type FinFET;
- and
- forming gate, source, and drain regions for said second fin to create said second-type FinFET,
- wherein a first region of said BOX layer below said first fin is thicker above said second-type layer when compared to a second region of said BOX layer below said second fin, and
- wherein said second fin is taller than said first fin.
A method of forming an integrated circuit structure having a first-type fin-type field effect transistor (FinFET) and a second-type FinFET above a buried oxide (BOX) layer, said method comprising:
- providing a structure having a first-type layer and a second-type layer separated by said BOX layer,
- removing a portion of said first-type layer to expose a portion of said BOX layer;
- thinning an exposed portion of said BOX layer;
- forming a seed opening through said exposed portion of said BOX layer;
- growing a second-type material from said second-type layer through said seed opening;
- patterning said first-type layer into a first fin and said second-type material into a second fin;
- forming gate, source, and drain regions for said first fin to create said first-type FinFET;
- and
- forming gate, source, and drain regions for said second fin to create said second-type FinFET,
- wherein a first region of said BOX layer below said first fin is thicker above said second-type layer when compared to a second region of said BOX layer below said second fin,
- wherein said second fin is taller than said first fin, and
- wherein a height difference between said first fin and said second fin is approximately equal to a thickness difference between said first region of said BOX layer and said second region of said BOX layer.
Dependencies are inferred from the claim text.