Pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasayuki Endo, Masaru Sasago
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Abstract
In a pattern formation method, a resist film including a compound having a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist pattern made of the resist film. Subsequently, the lactone ring included in the resist pattern is opened by exposing the resist pattern to an acrylic acid aqueous solution. Thereafter, with the resist pattern where the lactone ring has been opened used as a mask, the substrate is etched, so as to form a recess in a good shape.
Claims9
A pattern formation method comprising the steps of:
- forming a resist film including a compound having a lactone ring on a substrate;
- performing pattern exposure by selectively irradiating said resist film with exposing light;
- forming a resist pattern made of said resist film by developing said resist film after the pattern exposure;
- opening said lactone ring included in said resist pattern;
- and
- etching said substrate by using, as a mask, said resist pattern in which said lactone ring has been opened.
Dependencies are inferred from the claim text.